Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation
نویسندگان
چکیده
منابع مشابه
Ion sensitive Field Effect Transistors (ISFETs) Basics and Applications
Microfabricated semiconductor devices are essential components of many biochemical sensors today, and show great potential for advanced devices in the future. Since the proposal of an pH sensitive device, based on the technology of field effect transistors, was made in the early seventies, these so called ISFETs have been of great interest for the application in chemical and biological sensing ...
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Although the Tunnel Field-Effect Transistor (TFET) is a promising device for ultra-low power CMOS technology due to the ability to reduce power supply voltage and very small off-current, there have been few reports on the control of VT for TFETs. Unfortunately, the TFET needs a different technique to adjust VT than the MOSFET because most of TFETs are assumed to use on SOI substrates. In this p...
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Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal i...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2018.2847740