Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation

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ژورنال

عنوان ژورنال: IEEE Journal of the Electron Devices Society

سال: 2018

ISSN: 2168-6734

DOI: 10.1109/jeds.2018.2847740